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Brand Name : ZMSH
Model Number : GaN Gallium Nitride Wafer
Place of Origin : China
Payment Terms : T/T
Delivery Time : 2-4 weeks
Dimension : 1" diameter or 25.4 +/- 0.5 mm
Thickness : 350 +/- 50 um
Primary Flat : 12 +/- 1 mm
Secondary Flat : 8 +/- 1 mm
Orientation : (0001) C-plane
Total Thickness Variation : ≤ 40 um
Bow : 0 +/- 10 um
Resistivity : ~ 10-3 ohm-cm
Carrier Concentration : ~ 1019 cm-3
Carrier Mobility : ~ 150 cm2/V*s
Etch Pit Density : < 5 x 104 cm-2
Polishing : Front surface: RMS < 0.5 nm, Epi ready, Back surface ground.
GaN Gallium Nitride Wafer High Electron Mobility RF Devices Optoelectronics and LEDs
Gallium Nitride (GaN) wafers have emerged as a pivotal technology in various industries, owing to their unique material properties. With a wide bandgap, high electron mobility, and exceptional thermal stability, GaN wafers find applications in power electronics, RF devices, optoelectronics, and more. This abstract explores the versatile applications of GaN wafers, from powering 5G communications to illuminating LEDs and advancing solar energy systems. The high-performance characteristics of GaN make it a cornerstone in the development of compact and efficient electronic devices, influencing sectors such as automotive electronics, aerospace, and renewable energy. As a driving force in technological innovation, GaN wafers continue to redefine possibilities across diverse industries, shaping the landscape of modern electronics and communication systems.
Gallium Nitride (GaN) wafers find a wide range of applications across multiple industries, leveraging their unique material properties for enhanced performance in electronic and optoelectronic devices. Here are some key applications of GaN wafers:
Power Electronics:
RF (Radio Frequency) Devices:
Optoelectronics and LEDs:
UV (Ultraviolet) Optoelectronic Devices:
High-Electron-Mobility Transistors (HEMTs):
Wireless Communication (5G):
Power Supplies and Converters:
Automotive Electronics:
Solar Power Inverters:
Advanced Radar Systems:
The diverse applications of GaN wafers underscore their significance in advancing technology across multiple sectors. The material's unique combination of high electron mobility, wide bandgap, and other beneficial properties positions GaN as a key enabler for the development of advanced electronic and optoelectronic devices.
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GaN Gallium Nitride Wafer High Electron Mobility RF Devices Optoelectronics And LEDs Images |