| | Non-Polar Freestanding GaN Substrates(a-plane and m-plane) |
| Item | GaN-FS-a | GaN-FS-m |
| Dimensions | 5.0mm×5.5mm |
| 5.0mm×10.0mm |
| 5.0mm×20.0mm |
| Customized Size |
| Thickness | 350 ± 25 µm |
| Orientation | a-plane ± 1° | m-plane ± 1° |
| TTV | ≤15 µm |
| BOW | ≤20 µm |
| Conduction Type | N-type |
| Resistivity(300K) | < 0.5 Ω·cm |
| Dislocation Density | Less than 5x106 cm-2 |
| Useable Surface Area | > 90% |
| Polishing | Front Surface: Ra < 0.2nm. Epi-ready polished |
| Back Surface: Fine ground |
| Package | Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere. |
Q&A
Q:What is a GaN wafer?
A:A GaN wafer (gallium nitride wafer) is a thin, flat substrate made from gallium nitride, a wide-bandgap semiconductor material that is widely used in high-performance electronics. GaN wafers are the foundation for manufacturing electronic devices, particularly for applications requiring high power, high frequency, and high efficiency. This material is especially important in industries such as power electronics, telecommunications, and LED lighting.
Q:Why is GaN better than silicon?
A:GaN (gallium nitride) is better than silicon in many high-performance applications due to its wide bandgap (3.4 eV compared to silicon's 1.1 eV), enabling GaN devices to operate at higher voltages, temperatures, and frequencies. GaN's high efficiency leads to lower heat generation and reduced energy loss, making it ideal for power electronics, fast-charging systems, and high-frequency applications. Additionally, GaN has better thermal conductivity, allowing devices to run more efficiently in demanding conditions. As a result, GaN-based devices are more compact, energy-efficient, and reliable than their silicon counterparts.
