Silicon on Insulator SOI Wafer 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron Doped )

Silicon-on-Insulator SOI wafer 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron doped )

Silicon-on-Insulator (SOI) Wafer Abstract

This Silicon-on-Insulator (SOI) wafer is a specialized semiconductor substrate designed for advanced electronic and microelectromechanical systems (MEMS) applications. The wafer is characterized by a multi-layer structure that enhances device performance, reduces parasitic capacitance, and improves thermal isolation, making it an ideal choice for a wide range of high-performance and high-precision applications.

Silicon-on-Insulator (SOI) Wafer Product Properties

Wafer Specifications:

• Wafer Diameter: 6 inches (150 mm)
  • The 6-inch diameter provides a large surface area for device fabrication, improving manufacturing efficiency and reducing production costs.

Device Layer:

• Thickness: 2.5 micrometers
  • The thin device layer allows for precise control of electronic properties, essential for high-speed and high-performance applications.
• Doping: P-type (Phosphorus-doped)
  • Phosphorus doping enhances the electrical conductivity of the device layer, making it suitable for various p-type semiconductor devices.

Buried Oxide (BOX) Layer:

• Thickness: 1.0 micrometer
  • The 1.0 μm thick SiO2 layer provides excellent electrical isolation between the device layer and the handle wafer, reducing parasitic capacitance and improving signal integrity.

Handle Wafer:

• Thickness: 625 micrometers
  • The thick handle wafer ensures mechanical stability during fabrication and operation, preventing warping or breakage.
• Type: P-type (Boron-doped)
  • Boron doping improves the mechanical strength and thermal conductivity of the handle wafer, aiding in heat dissipation and enhancing overall device reliability.

Key Product Properties:

1. High-Quality Device Layer:

   • Carrier Mobility: High carrier mobility in the phosphorus-doped layer ensures fast electronic response and high-speed operation.
   • Low Defect Density: The high-quality fabrication process ensures minimal defects, leading to better performance and higher yields.

2. Efficient Electrical Isolation:

   • Low Parasitic Capacitance: The BOX layer effectively isolates the device layer from the substrate, reducing parasitic capacitance and crosstalk, crucial for high-frequency and low-power applications.
   • Signal Integrity: Enhanced electrical isolation helps maintain signal integrity, which is essential for high-precision analog and digital circuits.

3. Thermal Management:

   • Thermal Conductivity: The boron-doped handle wafer provides good thermal conductivity, aiding in the dissipation of heat generated during device operation, thus preventing overheating and ensuring stable performance.
   • Heat Resistance: The wafer's structure and materials ensure it can withstand high temperatures during processing and operation.

4. Mechanical Stability:

   • Robustness: The thick handle wafer provides mechanical support, ensuring the wafer remains stable during the fabrication process and under operational stresses.
   • Durability: The mechanical stability of the handle wafer helps prevent damage, reducing the risk of wafer breakage and improving overall device longevity.

5. Versatility in Applications:

   • High-Performance Computing: Suitable for processors and other high-speed digital logic circuits, thanks to its high carrier mobility and low parasitic capacitance.
   • 5G Communication: Ideal for RF components and high-frequency signal processing, benefiting from the excellent electrical isolation and thermal management properties.
   • MEMS Devices: Perfect for MEMS fabrication, offering the mechanical stability and precision needed for microfabricated structures.
   • Analog and Mixed-Signal Circuits: The low noise and reduced crosstalk make it suitable for high-precision analog circuits.
   • Power Electronics: The robust thermal and mechanical properties make it suitable for power management applications requiring high efficiency and reliability.

Conclusion

This Silicon-on-Insulator (SOI) wafer offers a unique combination of high-quality materials and advanced fabrication techniques, resulting in a substrate that excels in electrical performance, thermal management, and mechanical stability. These properties make it an ideal choice for a wide range of high-performance electronic and MEMS applications, supporting the development of next-generation semiconductor devices.

Silicon-on-Insulator (SOI) Wafer Product photos

Q&A

What Are SOI Wafers (Silicon-On-Insulator Wafers)?

Silicon-On-Insulator (SOI) wafers are a type of semiconductor substrate that consist of multiple layers, including a thin silicon device layer, an insulating oxide layer, and a supporting silicon handle wafer. This structure enhances the performance of semiconductor devices by providing better electrical isolation, reducing parasitic capacitance, and improving thermal management.

625um SOI wafer

P-doped SOI wafer

Silicon on Insulator SOI Wafer 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron Doped ) Images