SIC Silicon Carbide Wafer 4H - N Type For MOS Device 8inch Dia200mm

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SIC Silicon Carbide Wafer 4H - N Type For MOS Device 8inch Dia200mm

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SIC Silicon Carbide Wafer 4H - N Type For MOS Device 8inch Dia200mm

2inch 4/6inch dia200mm sic seed wafer 1mm thickness for ingot growth High Purity 4 6 8-inch conductive semi-insulation SiC single crystal wafer Customized size/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ ...

Product Tags:

MOS Device SIC Wafer

Dia200mm Silicon Carbide Wafer

4H-N Silicon Carbide Substrate

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